Conductive structure and electronic device comprising same

ABSTRACT

The present specification provides a conductive structure body and an electronic device comprising the same.

TECHNICAL FIELD

This application claims priority to and the benefit of Korean PatentApplication No. 10-2015-0036112 filed in the Korean IntellectualProperty Office on Mar. 16, 2015, the entire contents of which areincorporated herein by reference.

The present specification relates to a conductive structure body and anelectronic device comprising the same.

BACKGROUND ART

With sudden emergence of a new renewable energy industry together with ahigh-tech information technology industry, there is a growing interestin a conductive structure body with both electrical conductivity andlight transmission. A conductive structure body in an organic electronicdevice as a thin transparent substrate needs to transmit light and haveexcellent electrical conductivity.

As a material of the conductive structure body, transparent conductingoxide (TCO) fabricated in a thin film shape is representative. Thetransparent conductive oxide which is collectively referred to as anoxide-based degenerated semiconductor electrode having both high opticaltransmittance (85% or higher) and low specific resistance (1×10⁻³ Ωm) ina visible-ray region is used as core electrode materials for functionalthin films such as an antistatic film, an electromagnetic wave shieldingfilm, and the like, a flat panel display, a solar cell, a touch panel, atransparent transistor, a flexible photoelectric device, a transparentphotoelectric device, and the like according to a size of the surfaceresistance.

However, the conductive structure body manufactured using thetransparent conductive oxide as a material has a problem that efficiencyof the device is lowered due to low electric conductivity.

DETAILED DESCRIPTION OF THE INVENTION Technical Problem

The present specification has been made in an effort to provide aconductive structure body and an electronic device comprising the same.

Technical Solution

An exemplary embodiment of the present specification provides aconductive structure body comprising: a first dielectric layercomprising a first metal compound; a second dielectric layer comprisinga second metal compound provided to face the first dielectric layercomprising the first metal oxide; and a metal layer provided between thefirst dielectric layer and the second dielectric layer, in which theconductive structure body satisfies Equation 1 given below.

$\begin{matrix}{{\frac{0.12}{D_{eff}} + \left( {1 - 0.06^{k_{{eff}\; \_ \; {dielectric}}}} \right) + \left( {1 - 0.98^{({d \cdot k_{{eff}\; \_ \; {metal}}})}} \right)} \leq 0.25} & \left\lbrack {{Equation}\mspace{14mu} 1} \right\rbrack \\{D_{eff} = \frac{n_{{eff}\; \_ \; 550} - 1}{n_{{eff}\; \_ \; 380} - n_{{eff}\; \_ \; 450}}} & \left\lbrack {{Equation}\mspace{14mu} 2} \right\rbrack \\{n_{{eff}\; \_ \; {dielectric}}^{2} = {\frac{1}{2}\left\{ {{\left( {n_{1}^{2} - k_{1}^{2}} \right)f_{1}} + {\left( {n_{2}^{2} - k_{2}^{2}} \right)f_{2}}} \right\} \times \left( {1 + \left\{ {1 + \left\lbrack \frac{2\left( {{n_{1}k_{1}f_{1}} + {n_{2}k_{2}f_{2}}} \right)}{{\left( {n_{1}^{2} - k_{1}^{2}} \right)f_{1}} + {\left( {n_{2}^{2} - k_{2}^{2}} \right)f_{2}}} \right\rbrack^{2}} \right\}^{1/2}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 3} \right\rbrack \\{k_{{eff}\; \_ \; {dielectric}} = {\frac{1}{n_{{eff}\; \_ \; {dielectric}}}\left( {{n_{1}k_{1}f_{1}} + {n_{2}k_{2}f_{2}}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 4} \right\rbrack \\{n_{{eff}\; \_ \; {metal}}^{2} = {\frac{1}{2}\left\{ {{\left( {n_{3}^{2} - k_{3}^{2}} \right)f_{3}} + {\left( {n_{4}^{2} - k_{4}^{2}} \right)f_{4}}} \right\} \times \left( {1 + \left\{ {1 + \left\lbrack \frac{2\left( {{n_{3}k_{3}f_{3}} + {n_{4}k_{4}f_{4}}} \right)}{{\left( {n_{3}^{2} - k_{3}^{2}} \right)f_{3}} + {\left( {n_{4}^{2} - k_{4}^{2}} \right)f_{4}}} \right\rbrack^{2}} \right\}^{1/2}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 5} \right\rbrack \\{k_{{eff}\; \_ \; {metal}} = {\frac{1}{n_{{eff}\; \_ \; {metal}}}\left( {{n_{3}k_{3}f_{3}} + {n_{4}k_{4}f_{4}}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 6} \right\rbrack\end{matrix}$

In Equation 1, D_(eff) represents a dispersion of average refractiveindexes of the first dielectric layer and the second dielectric layerobtained by Equations 2 and 3, k_(eff) _(_) _(dielectric) represents anaverage light extinction coefficient of the first dielectric layer andthe second dielectric layer obtained by Equation 4, d represents a totalthickness of the first dielectric layer, the second dielectric layer,and the metal layer, k_(eff) _(_) _(metal) represents the average lightextinction coefficient of the first dielectric layer, the seconddielectric layer, and the metal layer obtained by Equation 5,

in Equation 2, n_(eff) _(_) ₅₅₀ represents the average refractive indexof the first dielectric layer and the second dielectric layer obtainedby Equation 3 in the light having a wavelength of 550 nm, n_(eff) _(_)₄₅₀ represents the average refractive index of the first dielectriclayer and the second dielectric layer obtained by the Equation 3 in thelight having the wavelength of 450 nm, and n_(eff) _(_) ₃₈₀ representsthe average refractive index of the first dielectric layer and thesecond dielectric layer obtained by Equation 3 in the light having thewavelength of 380 nm,

in Equations 3 and 4, n₁ represents a refractive index of the firstdielectric layer, n₂ represents the refractive index of the seconddielectric layer, k₁ represents the light extinction coefficient of thefirst dielectric layer, k₂ represents the light extinction coefficientof the second dielectric layer, f₁ represents a thickness ratio of thefirst dielectric layer to the first dielectric layer and the seconddielectric layer, and f₂ represents the thickness ratio of the seconddielectric layer to the first dielectric layer and the second dielectriclayer,

in Equations 5 and 6, n₃ represents an average refractive index n_(eff)_(_) _(dielectric) of the first dielectric layer and the seconddielectric layer, n₄ represents the refractive index of the metal layer,k₃ represents the average light extinction coefficient K_(eff) _(_)_(dielectric) of the first dielectric layer and the second dielectriclayer, k₄ represents the light extinction coefficient of the metallayer, f₃ represents the thickness ratio of the first dielectric layerand the second dielectric layer to the conductive structure body, and f₄represents the thickness ratio of the metal layer to the conductivestructure body, and

each of the average light extinction coefficient k_(eff) _(_)_(dielectric) of the first dielectric layer and the second dielectriclayer and the average light extinction coefficient k_(eff) _(_) _(metal)of the first dielectric layer, the second dielectric layer, and themetal layer is a value measured in the light having the wavelength of380 nm.

Another exemplary embodiment of the present specification provides atransparent electrode comprising the conductive structure body.

Still another exemplary embodiment of the present specification providesan electronic device comprising the conductive structure body.

Advantageous Effects

The conductive structure body according to the embodiment of the presentspecification has high light transmittance and a low surface resistancevalue. Further, the conductive structure body according to theembodiment of the present specification has features of a low change inthe light transmittance according to a wavelength and particularly, asmall change in the light transmittance in a wavelength range of 380 nmto 450 nm. Further, the conductive structure body according to theembodiment of the present specification may implement high lighttransmittance in a wide wavelength range.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 illustrates a laminated structure of a conductive structure bodyaccording to an embodiment of the present specification.

FIG. 2 illustrates light transmittance according to a wavelength inconductive structure bodies according to Examples 1 to 3 and ComparativeExample 1.

EXPLANATION OF REFERENCE NUMERALS AND SYMBOLS

-   -   101: First dielectric layer    -   201: Metal layer    -   301: Second dielectric layer

BEST MODE

In this specification, it will be understood that when a member isreferred to as being “on” another member, it can be directly on theother member or intervening members may also be present.

Throughout the specification, unless explicitly described to thecontrary, the word “comprise” and variations such as “comprises” or“comprising” will be understood to imply the inclusion of statedelements but not the exclusion of any other elements.

Hereinafter, the present specification will be described in more detail.

An exemplary embodiment of the present specification provides aconductive structure body comprising: a first dielectric layercomprising a first metal compound; a second dielectric layer provided toface the first dielectric layer comprising the first metal oxide andcomprising a second metal compound; and a metal layer provided betweenthe first dielectric layer and the second dielectric layer andsatisfying Equation 1 below.

$\begin{matrix}{{\frac{0.12}{D_{eff}} + \left( {1 - 0.06^{k_{{eff}\; \_ \; {dielectric}}}} \right) + \left( {1 - 0.98^{({d \cdot k_{{eff}\; \_ \; {metal}}})}} \right)} \leq 0.25} & \left\lbrack {{Equation}\mspace{14mu} 1} \right\rbrack \\{D_{eff} = \frac{n_{{eff}\; \_ \; 550} - 1}{n_{{eff}\; \_ \; 380} - n_{{eff}\; \_ \; 450}}} & \left\lbrack {{Equation}\mspace{14mu} 2} \right\rbrack \\{n_{{eff}\; \_ \; {dielectric}}^{2} = {\frac{1}{2}\left\{ {{\left( {n_{1}^{2} - k_{1}^{2}} \right)f_{1}} + {\left( {n_{2}^{2} - k_{2}^{2}} \right)f_{2}}} \right\} \times \left( {1 + \left\{ {1 + \left\lbrack \frac{2\left( {{n_{1}k_{1}f_{1}} + {n_{2}k_{2}f_{2}}} \right)}{{\left( {n_{1}^{2} - k_{1}^{2}} \right)f_{1}} + {\left( {n_{2}^{2} - k_{2}^{2}} \right)f_{2}}} \right\rbrack^{2}} \right\}^{1/2}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 3} \right\rbrack \\{k_{{eff}\; \_ \; {dielectric}} = {\frac{1}{n_{{eff}\; \_ \; {dielectric}}}\left( {{n_{1}k_{1}f_{1}} + {n_{2}k_{2}f_{2}}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 4} \right\rbrack \\{n_{{eff}\; \_ \; {metal}}^{2} = {\frac{1}{2}\left\{ {{\left( {n_{3}^{2} - k_{3}^{2}} \right)f_{3}} + {\left( {n_{4}^{2} - k_{4}^{2}} \right)f_{4}}} \right\} \times \left( {1 + \left\{ {1 + \left\lbrack \frac{2\left( {{n_{3}k_{3}f_{3}} + {n_{4}k_{4}f_{4}}} \right)}{{\left( {n_{3}^{2} - k_{3}^{2}} \right)f_{3}} + {\left( {n_{4}^{2} - k_{4}^{2}} \right)f_{4}}} \right\rbrack^{2}} \right\}^{1/2}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 5} \right\rbrack \\{k_{{eff}\; \_ \; {metal}} = {\frac{1}{n_{{eff}\; \_ \; {metal}}}\left( {{n_{3}k_{3}f_{3}} + {n_{4}k_{4}f_{4}}} \right)}} & \left\lbrack {{Equation}\mspace{14mu} 6} \right\rbrack\end{matrix}$

In Equation 1, D_(eff) represents a dispersion of average refractiveindexes of the first dielectric layer and the second dielectric layerobtained by Equations 2 and 3, k_(eff) _(_) _(dielectric) represents anaverage light extinction coefficient of the first dielectric layer andthe second dielectric layer obtained by Equation 4, d represents a totalthickness of the first dielectric layer, the second dielectric layer,and the metal layer, k_(eff) _(_) _(metal) represents the average lightextinction coefficient of the first dielectric layer, the seconddielectric layer, and the metal layer obtained by Equation 5,

in Equation 2, n_(eff) _(_) ₅₅₀ represents the average refractive indexof the first dielectric layer and the second dielectric layer obtainedby Equation 3 in the light having a wavelength of 550 nm, n_(eff) _(_)₄₅₀ represents the average refractive index of the first dielectriclayer and the second dielectric layer obtained by the Equation 3 in thelight having the wavelength of 450 nm, and n_(eff) _(_) ₃₈₀ representsthe average refractive index of the first dielectric layer and thesecond dielectric layer obtained by Equation 3 in the light having thewavelength of 380 nm,

in Equations 3 and 4, n₁ represents a refractive index of the firstdielectric layer, n₂ represents the refractive index of the seconddielectric layer, k₁ represents the light extinction coefficient of thefirst dielectric layer, k₂ represents the light extinction coefficientof the second dielectric layer, f₁ represents a thickness ratio of thefirst dielectric layer to the first dielectric layer and the seconddielectric layer, and f₂ represents the thickness ratio of the seconddielectric layer to the first dielectric layer and the second dielectriclayer,

in Equations 5 and 6, n₃ represents an average refractive index n_(eff)_(_) _(dielectric) of the first dielectric layer and the seconddielectric layer, n₄ represents the refractive index of the metal layer,k₃ represents the average light extinction coefficient k_(eff) _(_)_(dielectric) of the first dielectric layer and the second dielectriclayer, k₄ represents the light extinction coefficient of the metallayer, f₃ represents the thickness ratio of the first dielectric layerand the second dielectric layer to the conductive structure body, and f₄represents the thickness ratio of the metal layer to the conductivestructure body, and

each of the average light extinction coefficient k_(eff) _(_)_(dielectric) of the first dielectric layer and the second dielectriclayer and the average light extinction coefficient k_(eff) _(_) _(metal)of the first dielectric layer, the second dielectric layer, and themetal layer is a value measured in the light having the wavelength of380 nm.

According to the embodiment of the present specification, Equation 1means a parameter for manufacturing a conductive structure body whichmay secure high light transmittance and minimize a change in lighttransmittance in a visible-ray region having a short wavelength. Indetail, factors affecting the change of the transmittance of theconductive structure body and the transmittance are the dispersion ofthe refractive index of the dielectric layer, a light absorption amountof the dielectric layer, and the light absorption amount of the metallayer, and Equation 1 means a relational expression to acquire anoptimal range of the affecting factors.

According to the embodiment of the present specification, the refractiveindex and the light extinction coefficient of each layer according toEquations 1 to 6 may be values measured through an ellipsometer.

Since a general conductive structure body is very large in change amountof the light transmittance in the wavelength range of 380 nm to 450 nm,there is a problem in that a difference in light transmittance increasesdepending on the wavelength range. Therefore, the present inventors havefound a condition of the conductive structure body which may minimizethe change amount of the light transmittance in the wavelength range of380 nm to 450 nm.

According to the embodiment of the present specification, when a valueof Equation 1 is 0.25 or less, there is an advantage in that theconductive structure body is small in change amount of the lighttransmittance in the wavelength range of 380 nm to 450 nm. In detail,when the value of Equation 1 is 0.25 or less, since the conductivestructure body is small in change amount of the light transmittance inthe wavelength range of 380 nm to 450 nm, more excellent transparencymay be implemented in a wide wavelength range and high visibility may besecured.

According to the embodiment of the present specification, in order tosatisfy that the value of Equation 1 is 0.25 or less, the conductivestructure body may be applied by considering optical characteristicsdepending on materials of respective constituent elements of theconductive structure body.

Since the refractive index n≈1/T when an incident angle of light is 0°and the light is incident in the air, the change in transmittance by thedifference in refractive index may be expressed by a relation betweenD_(eff) which is the dispersion of the refractive index and the lighttransmittance.

According to the embodiment of the present specification, a coefficientof 0.12 of Equation 1 as an experimentally acquired coefficient is avalue derived by using the light transmittance in 380 nm, the lighttransmittance in 450 nm, and the light transmittance in 550 nm of theconductive structure body. Specifically, according to the embodiment ofthe present specification, the 0.12 coefficient of Equation 1 may beexperimentally derived through Equation 7 below.

$\begin{matrix}\frac{\left( {1 - T_{550}} \right)T_{380}T_{450}}{T_{550}} & \left\lbrack {{Equation}\mspace{14mu} 7} \right\rbrack\end{matrix}$

In Equation 7, T₅₅₀ represents the light transmittance of the conductivestructure body in the light having the wavelength of 550 nm, T₄₅₀represents the light transmittance of the conductive structure body inthe light having the wavelength of 450 nm, and T₃₈₀ represents the lighttransmittance of the conductive structure body in the light having thewavelength of 380 nm. In detail, the 380 nm wavelength is a lowestwavelength in the visible-ray region, the 450 nm wavelength is a pointwhere the change of visible-ray transmittance is saturated in theconductive structure body, the 550 nm wavelength is a wavelength whichis most recognized by eyes of a person among visible rays, and when aresult of deriving an optimal value through Equation 7 is 0.12, aconductive structure body showing an excellent characteristic may bemanufactured.

According to the embodiment of the present specification, when thecoefficient of 0.12 may be established when the change in lighttransmittance of the conductive structure body is within 30% in thewavelength of 380 nm to 450 nm and the average light transmittance is70% or more.

According to the embodiment of the present specification, the change inlight transmittance by light absorption of each layer of a conductivelaminate may be expressed by the light extinction coefficient. Indetail, an absorption amount by the light extinction coefficient of eachlayer may be expressed by an equation given below.

$e^{{- \frac{4\pi \; k_{eff}}{\lambda}} \cdot d}$

In the above equation, λ represents the wavelength of the light, k_(eff)represents the light extinction coefficient of the corresponding layer,and d represents the thickness of the corresponding layer. Thetransmittance is changed by the light absorption in each layer of theconductive laminate and the light absorption amount of each layer may bedetermined by the light extinction coefficient as shown in the equation.

According to the embodiment of the present specification, when a sum ofthe thicknesses of the first dielectric layer and the second dielectriclayer is 40 nm or more and 120 nm or less, the coefficient of 0.06 ofEquation 1 is a value to optimize performance of the conductivestructure body.

According to the embodiment of the present specification, when the sumof the thicknesses of the first dielectric layer and the seconddielectric layer is 40 nm or more and 120 nm or less and the thicknessof the metal layer is 5 nm or more and 20 nm or less, the coefficient of0.98 of Equation 1 is a value to optimize performance of the conductivestructure body.

According to the embodiment of the present specification, the dispersionD_(eff) of the average refractive index of the first dielectric layerand the second dielectric layer may be 1.1 or more. In detail, accordingto the embodiment of the present specification, when the dispersionD_(eff) of the average refractive index of the first dielectric layerand the second dielectric layer is 1.1 or less, the value of Equation 1is more than 0.25, and as a result, the change amount in lighttransmittance in the low wavelength will increase.

According to the embodiment of the present specification, the averagelight extinction coefficient k_(eff) _(_) _(dielectric) of the firstdielectric layer and the second dielectric layer may be 0.1 or less.Specifically, according to the embodiment of the present specification,the average light extinction coefficient k_(eff) _(_) _(dielectric) ofthe first dielectric layer and the second dielectric layer may be 0.04nm or less.

According to the embodiment of the present specification, the averagelight extinction coefficient k_(eff) _(_) _(metal) of the firstdielectric layer, the second dielectric layer, and the metal layer maybe 0.22 or less. In detail, according to the embodiment of the presentspecification, the average light extinction coefficient k_(eff) _(_)_(metal) of the first dielectric layer, the second dielectric layer, andthe metal layer may be 0.1 or less.

FIG. 1 illustrates a laminated structure of a conductive structure bodyaccording to an embodiment of the present specification. Particularly,FIG. 1 illustrates a conductive structure body in which a firstdielectric layer 101, a metal layer 201, and a second dielectric layer301 are sequentially provided.

According to the embodiment of the present specification, a totalthickness of the first dielectric layer and the second dielectric layermay be 40 nm or more and 120 nm or less. Specifically, according to theembodiment of the present specification, the total thickness of thefirst dielectric layer and the second dielectric layer may be 40 nm ormore and 110 nm or less.

The first dielectric layer is a high refractive material and may serveto enhance a light transmittance of the multilayered conductivestructure body using the metal layer and facilitate deposition of themetal layer.

According to the embodiment of the present specification, a thickness ofthe first dielectric layer may be 20 nm or more and 70 nm or less.Particularly, according to the embodiment of the present specification,the thickness of the first dielectric layer may be 20 nm or more and 60nm or less, or 25 nm or more and 55 nm or less.

When the thickness of the first dielectric layer is in the range, thereis an advantage in that a transmittance of the conductive structure bodyhaving a multilayered thin film form is excellent. Particularly, whenthe thickness of the first dielectric layer is beyond the range, thereis a problem in that the transmittance of the conductive structure bodyis lowered. Further, when the thickness is beyond the range, a defectratio of the deposited metal layer may be increased.

According to the embodiment of the present specification, a thickness ofthe second dielectric layer may be 20 nm or more and 80 nm or less.Particularly, according to the embodiment of the present specification,the thickness of the second dielectric layer may be 20 nm or more and 60nm or less, or 25 nm or more and 55 nm or less.

When the thickness of the second dielectric layer is in the range, thereis an advantage in that the conductive structure body may have excellentelectric conductivity and a low resistance value. Particularly, thethickness range of the second dielectric layer is obtained through anoptical design and when the thickness is beyond the range, there is aproblem in that the light transmittance of the conductive structure bodyis lowered.

According to the embodiment of the present specification, a thickness ofthe metal layer may be 5 nm or more and 25 nm or less. Particularly, inthe conductive structure body according to the embodiment of the presentspecification, the thickness of the metal layer may be 7 nm or more and20 nm or less.

When the thickness of the metal layer is in the range, there is anadvantage in that the conductive structure body may have excellentelectric conductivity and a low resistance value. Particularly, when thethickness of the metal layer is less than 5 nm, a continuous film ishardly formed and thus there is a problem in that it is difficult toembody low resistance, and when the thickness is more than 20 nm, thereis a problem in that the transmittance of the conductive structure bodyis lowered.

According to the embodiment of the present specification, the metallayer may comprise one or more metals selected from a group consistingof Ag, Pt, Al, Ni, Ti, Cu, Pd, P, Zn, Si, Sn, Cd, Ga, Mn and Co.Particularly, according to the embodiment of the present specification,the metal layer may comprise one or more kinds of metals selected from agroup consisting of Ag, Pt and Al. More particularly, according to theembodiment of the present specification, the metal layer may compriseAg.

Further, according to the embodiment of the present specification, themetal layer may be made of Ag, or Ag and Ag oxide. Particularly, themetal layer may be made of only Ag. Alternatively, in a manufacturingprocess of the conductive structure body or a process in which theconductive structure body is comprised and used in an electronic device,by contact with air and moisture, some of the Ag oxide may be comprisedin the metal layer.

According to the embodiment of the present specification, when the metallayer is made of Ag and Ag oxide, the Ag oxide may be 0.1 wt % or moreand 50 wt % of the weight of the metal layer.

The metal layer may serve to embody low resistance of the conductivestructure body by the excellent electric conductivity and the lowspecific resistance.

According to the embodiment of the present specification, the firstmetal compound and the second metal compound may independently compriseoxides comprising one or more selected from a group consisting of Hf,Nb, Zr, Y, Ta, La, V, Ti, Zn, Ni, B, Si, Al, In and Sn, respectively.

According to the embodiment of the present specification, the conductivestructure body further comprises a transparent supporter and the firstdielectric layer may be provided on the transparent supporter.

According to the embodiment of the present specification, thetransparent supporter may be a glass substrate or a transparent plasticsubstrate having excellent transparency, surface smoothness, ease ofhandling, and waterproofness, but is not limited thereto and anysubstrate which is commonly used in an electronic device is not limited.Specifically, the substrate may be made of glass; a urethane resin; apolyimide resin; a polyester resin; a (meth) acrylate-based polymerresin; and a polyolefin-based resin such as polyethylene orpolypropylene.

According to the embodiment of the present specification, the averagelight transmittance of the conductive structure body may be 70% or morein light having a wavelength of 550 nm. Particularly, according to theembodiment of the present specification, the average light transmittanceof the conductive structure body may be 75% or more or 80% or more inlight having a wavelength of 550 nm.

According to the embodiment of the present specification, a changeamount in the light transmittance of the conductive structure body maybe within 40% in a wavelength range of 380 nm to 450 nm. Particularly,according to the embodiment of the present specification, a changeamount in the light transmittance of the conductive structure body maybe within 30% in a wavelength range of 380 nm to 450 nm.

According to the embodiment of the present specification, a surfaceresistance value of the conductive structure body may be 20 Ω/sq orless. Specifically, according to the embodiment of the presentspecification, the surface resistance value of the conductive structurebody may be 10 Ω/sq or less.

According to the embodiment of the present specification, a surfaceresistance value of the conductive structure body may have a value of0.1 Ω/sq or more and 20 Ω/sq or less. The surface resistance value ofthe conductive structure body may be determined by the metal layer andthe low surface resistance value can be embodied by the thickness rangeof the metal layer and the thickness range of the second dielectriclayer comprising the second metal oxide.

When the conductive structure body is applied to the electronic deviceby the low surface resistance value, there is an advantage of enhancingefficiency of the electronic device. Furthermore, in spite of the lowsurface resistance value, there is an advantage of having a high lighttransmittance.

According to the embodiment of the present specification, the entirethickness of the conductive structure body may be 50 nm or more and 300nm or less.

An embodiment of the present specification provides a transparentelectrode comprising the conductive structure body.

An embodiment of the present specification provides an electronic devicecomprising the conductive structure body. According to the embodiment ofthe present specification, the conductive structure body comprised inthe electronic device may serve as a transparent electrode.

According to the embodiment of the present specification, the electronicdevice may be a touch panel, light emitting glass, a light emittingdevice, a solar cell or a transistor.

The touch panel, the light emitting glass, the light emitting device,the solar cell, and the transistor may be commonly known in the art, andthe electrode may be used as the conductive structure body of thepresent specification.

Hereinafter, the present specification will be described in detail withreference to Examples for a specific description. However, the Examplesaccording to the present specification may be modified in various forms,and it is not interpreted that the scope of the present specification islimited to the Examples described in detail below. The Examples of thepresent specification will be provided for more completely explainingthe present specification to those skilled in the art.

Example 1

A first dielectric layer was formed by depositing Hf oxide on a glasssubstrate by using an RF sputter method. A metal layer made of Ag wasdeposited to a thickness of 10 nm on the first dielectric layer by usinga DC sputter method and Nb oxide was deposited on the metal layer as asecond dielectric layer to manufacture a conductive structure body.

Example 2

A first dielectric layer was formed by depositing Hf oxide on a glasssubstrate by using an RF sputter method. A metal layer made of Ag wasdeposited to a thickness of 18 nm on the first dielectric layer by usinga DC sputter method and Hf oxide was deposited on the metal layer as asecond dielectric layer to manufacture a conductive structure body.

Example 3

A first dielectric layer was formed by depositing Hf oxide on a glasssubstrate by using an RF sputter method. A metal layer made of Ag wasdeposited to a thickness of 13 nm on the first dielectric layer by usinga DC sputter method and Nb oxide was deposited on the metal layer as asecond dielectric layer to manufacture a conductive structure body.

Comparative Example 1

A first dielectric layer was formed by depositing Ce oxide on a glasssubstrate by using an RF sputter method. A metal layer made of Ag wasdeposited to a thickness of 10 nm on the first dielectric layer by usinga DC sputter method and AZO was deposited on the metal layer as a seconddielectric layer to manufacture a conductive structure body.

Values of Equation 1 and physical properties according to eachconfiguration of the conductive structure bodies according to Examples 1to 3 and Comparative Example 1 were illustrated in Table 1 below.

TABLE 1 Refractive Index Thickness ΔTr First Second First (%) Dielec-Dielec- Dielec- Second Tr (@380 nm Surface Parameter tric tric tricMetal Dielectric (%) to Resistance Equation 1 D_(eff) _(—) _(dielectric)k_(eff) _(—) _(dielectric) k_(eff) _(—) _(metal) Layer Layer Layer LayerLayer @550 nm 450 nm) (Ω/sq) Example 1 0.1 9.51 0.008 0.036 2.09 2.08 4710 38 88.2 7.3 <10 Example 2 0.11 21.99 0 0.056 2.09 2.09 40 18 40 87.213 <10 Example 3 0.12 9.51 0.008 0.045 2.09 2.08 42 13 40 89 10.2 <10Comparative 0.29 3.88 0.05 0.075 2.26 1.91 28 10 43 85.7 27.6 <10Example 1

FIG. 2 illustrates light transmittances according to a wavelength in theconductive structure bodies according to Examples 1 to 3 and ComparativeExample 1.

According to Table 1 and FIG. 2, it can be seen that in the conductivestructure body according to the Comparative Example 1 in which Equation1 is not satisfied, a variation of the light transmittance in awavelength range of 380 nm to 450 nm is significantly large. On thecontrary, in the case of Examples 1 to 3 in which Equation 1 issatisfied, it can be seen that the variation of the light transmittancein a wavelength range of 380 nm to 450 nm is relatively small.

1. A conductive structure comprising: a first hafnium oxide layerincluding a hafnium oxide; a metal layer provided on the first hafniumoxide layer; and a second hafnium oxide layer including a hafnium oxideprovided on the metal layer, wherein the following Mathematical Formula1 is satisfied: $\begin{matrix}{{\frac{0.12}{D_{eff}} + \left( {1 - 0.06^{k_{{eff}\; \_ \; {dielectric}}}} \right) + \left( {1 - 0.98^{({d \cdot k_{{eff}\; \_ \; {metal}}})}} \right)} \leq 0.25} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 1} \right\rbrack \\{D_{eff} = \frac{n_{{eff}\; \_ \; 550} - 1}{n_{{eff}\; \_ \; 380} - n_{{eff}\; \_ \; 450}}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 2} \right\rbrack \\{n_{{eff}\; \_ \; {dielectric}}^{2} = {\frac{1}{2}\left\{ {{\left( {n_{1}^{2} - k_{1}^{2}} \right)f_{1}} + {\left( {n_{2}^{2} - k_{2}^{2}} \right)f_{2}}} \right\} \times \left( {1 + \left\{ {1 + \left\lbrack \frac{2\left( {{n_{1}k_{1}f_{1}} + {n_{2}k_{2}f_{2}}} \right)}{{\left( {n_{1}^{2} - k_{1}^{2}} \right)f_{1}} + {\left( {n_{2}^{2} - k_{2}^{2}} \right)f_{2}}} \right\rbrack^{2}} \right\}^{1/2}} \right)}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 3} \right\rbrack \\{k_{{eff}\; \_ \; {dielectric}} = {\frac{1}{n_{{eff}\; \_ \; {dielectric}}}\left( {{n_{1}k_{1}f_{1}} + {n_{2}k_{2}f_{2}}} \right)}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 4} \right\rbrack \\{n_{{eff}\; \_ \; {metal}}^{2} = {\frac{1}{2}\left\{ {{\left( {n_{3}^{2} - k_{3}^{2}} \right)f_{3}} + {\left( {n_{4}^{2} - k_{4}^{2}} \right)f_{4}}} \right\} \times \left( {1 + \left\{ {1 + \left\lbrack \frac{2\left( {{n_{3}k_{3}f_{3}} + {n_{4}k_{4}f_{4}}} \right)}{{\left( {n_{3}^{2} - k_{3}^{2}} \right)f_{3}} + {\left( {n_{4}^{2} - k_{4}^{2}} \right)f_{4}}} \right\rbrack^{2}} \right\}^{1/2}} \right)}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 5} \right\rbrack \\{k_{{eff}\; \_ \; {metal}} = {\frac{1}{n_{{eff}\; \_ \; {metal}}}\left( {{n_{3}k_{3}f_{3}} + {n_{4}k_{4}f_{4}}} \right)}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 6} \right\rbrack\end{matrix}$ wherein, in Mathematical Formula 1, D_(eff) is a degree ofdispersion of a mean refractive index of the first hafnium oxide layerand the second hafnium oxide layer calculated by Mathematical Formulae 2and 3, k_(eff) _(_) _(dielectric) is a mean extinction coefficient ofthe first hafnium oxide layer and the second hafnium oxide layercalculated by Mathematical Formula 4, d is a total thickness of thefirst hafnium oxide layer, the second hafnium oxide layer and the metallayer, and k_(eff) _(_) _(metal) is a mean extinction coefficient of thefirst hafnium oxide layer, the second hafnium oxide layer and the metallayer calculated by Mathematical Formula 5; in Mathematical Formula 2,n_(eff) _(_) ₅₅₀ is a mean refractive index of the first hafnium oxidelayer and the second hafnium oxide layer calculated by MathematicalFormula 3 in light with a wavelength of 550 nm, n_(eff) _(_) ₄₅₀ is amean refractive index of the first hafnium oxide layer and the secondhafnium oxide layer calculated by Mathematical Formula 3 in light with awavelength of 450 nm, and n_(eff) _(_) ₃₈₀ is a mean refractive index ofthe first hafnium oxide layer and the second hafnium oxide layercalculated by Mathematical Formula 3 in light with a wavelength of 380nm; in Mathematical Formulae 3 and 4, n₁ is a refractive index of thefirst hafnium oxide layer, n₂ is a refractive index of the secondhafnium oxide layer, k₁ is an extinction coefficient of the firsthafnium oxide layer, k₂ is an extinction coefficient of the secondhafnium oxide layer, f₁ is a thickness ratio of the first hafnium oxidelayer with respect to the first hafnium oxide layer and the secondhafnium oxide layer, and f₂ is a thickness ratio of the second hafniumoxide layer with respect to the first hafnium oxide layer and the secondhafnium oxide layer; in Mathematical Formulae 5 and 6, n₃ is a meanrefractive index (n_(eff) _(_) _(dielectric)) of the first hafnium oxidelayer and the second hafnium oxide layer, n₄ is a refractive index ofthe metal layer, k₃ is a mean extinction coefficient (k_(eff) _(_)_(dielectric)) of the first hafnium oxide layer and the second hafniumoxide layer, k₄ is an extinction coefficient of the metal layer, f₃ is athickness ratio of the first hafnium oxide layer and the second hafniumoxide layer with respect to the conductive structure, and f₄ is athickness ratio of the metal layer with respect to the conductivestructure; and the mean extinction coefficient (k_(eff) _(_)_(dielectric)) of the first hafnium oxide layer and the second hafniumoxide layer, and the mean extinction coefficient (k_(eff) _(_) _(metal))of the first hafnium oxide layer, the second hafnium oxide layer and themetal layer are values each measured in light with a wavelength of 380nm.
 2. The conductive structure of claim 1, wherein the degree ofdispersion of the mean refractive index (D_(eff)) of the first hafniumoxide layer and the second hafnium oxide layer is 1.1 or greater.
 3. Theconductive structure of claim 1, wherein the mean extinction coefficient(k_(eff) _(_) _(dielectric)) of the first hafnium oxide layer and thesecond hafnium oxide layer is 0.1 or less.
 4. The conductive structureof claim 1, wherein the mean extinction coefficient (k_(eff) _(_)_(metal)) of the first hafnium oxide layer, the second hafnium oxidelayer and the metal layer is 0.22 or less.
 5. The conductive structureof claim 1, wherein the first hafnium oxide layer and the second hafniumoxide layer has a total thickness of greater than or equal to 40 nm andless than or equal to 120 nm.
 6. The conductive structure of claim 1,wherein the first hafnium oxide layer and the second hafnium oxide layereach further include a dopant selected from the group consisting of Nb,Zr, Y, Ta, La, V, Ti, Zn, B, Si, Al, In and Sn.
 7. The conductivestructure of claim 6, wherein a content of the dopant is greater than orequal to 0.1 wt % and less than or equal to 20 wt % with respect to thehafnium oxide layer.
 8. The conductive structure of claim 1, wherein themetal layer has a thickness of greater than or equal to 5 nm and lessthan or equal to 25 nm.
 9. The conductive structure of claim 1, whereinthe metal layer has a refractive index of greater than or equal to 0.1and less than or equal to 1 in light with a wavelength of 550 nm. 10.The conductive structure of claim 1, wherein the conductive structurefurther includes a transparent support, and the first hafnium oxidelayer is provided on the transparent support.
 11. The conductivestructure of claim 1, which has mean light transmittance of 70% orgreater in light with a wavelength of 550 nm.
 12. The conductivestructure of claim 1, wherein variations in the light transmittance ofthe conductive structure are 40% or less in a 380 nm to 450 nmwavelength region.
 13. The conductive structure of claim 1, which has asheet resistance value of 20 Ω/sq or less.
 14. A transparent electrodecomprising the conductive structure of claim
 1. 15. An electronic devicecomprising the conductive structure of claim 1.